| PART |
Description |
Maker |
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FRM5W232FY |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector.
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC
CEL[California Eastern Labs]
|
| FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
| C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
| G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| G8925-24 G8925 G8925-21 G8925-22 G8925-23 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| NR4510UR NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Labs
|
